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| Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 610 mA, Pout = 14 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 15.5 dB Drain Efficiency -- 26% IM3 @ 10 MHz Offset -- - 37 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset -- - 40 dBc in 3.84 MHz Bandwidth * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * 200_C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6S21060NR1 MRF6S21060NBR1 2110 - 2170 MHz, 14 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S21060NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S21060NBR1 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +68 - 0.5, +12 - 65 to +150 200 Unit Vdc Vdc C C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 79C, 60 W CW Case Temperature 76C, 14 W CW Symbol RJC Value (1,2) 0.89 1.04 Unit C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MRF6S21060NR1 MRF6S21060NBR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 610 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.0 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.5 -- pF VGS(th) VGS(Q) VDS(on) 1.5 2 -- 2.2 2.8 0.3 2.5 4 -- Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 610 mA, Pout = 14 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps D IM3 ACPR IRL 13.5 24.5 -- -- -- 15.5 26 - 37 - 40 - 14 16.5 -- - 35 - 38 - 10 dB % dBc dBc dB MRF6S21060NR1 MRF6S21060NBR1 2 RF Device Data Freescale Semiconductor R1 VBIAS R2 C6 C1 C2 Z6 Z15 RF INPUT R3 Z1 C7 Z2 Z3 Z4 Z5 Z7 Z16 DUT VSUPPLY C9 C10 C11 Z8 Z9 Z10 Z11 Z12 Z13 C8 Z14 C3 C4 C5 RF OUTPUT VSUPPLY Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.250 x 0.080 Microstrip 0.860 x 0.080 Microstrip 0.300 x 0.405 Microstrip 0.350 x 0.080 Microstrip 0.350 x 0.755 Microstrip 0.680 x 0.080 Microstrip 0.115 x 0.755 Microstrip 0.115 x 1.000 Microstrip 0.240 x 1.000 Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB 0.270 x 0.300 Microstrip 0.230 x 0.080 Microstrip 0.310 x 0.300 Microstrip 0.830 x 0.080 Microstrip 0.200 x 0.080 Microstrip 1.000 x 0.080 Microstrip 1.100 x 0.070 Microstrip Arlon AD250, 0.030, r = 2.5 Figure 1. MRF6S21060NR1(NBR1) Test Circuit Schematic Table 6. MRF6S21060NR1(NBR1) Test Circuit Component Designations and Values Part C1 C2, C7 C3, C8, C9 C4, C5, C6, C10, C11 R1 R2 R3 Description 100 nF Chip Capacitor 4.7 pF Chip Capacitors 6.8 pF Chip Capacitors 10 F, 35 V Chip Capacitors 1 kW Chip Resistor 10 kW Chip Resistor 10 W Chip Resistor Part Number CDR33BX104AKWS 100B4R7CW 100B6R8CW GRM55DR61H106KA88L Manufacturer Kemet ATC ATC Murata MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 3 R1 C4 R2 C6 C1 C2 R3 C3 C5 CUT OUT AREA C7 C8 C9 C10 C11 MRF6S21060N Rev. 3 Figure 2. MRF6S21060NR1(NBR1) Test Circuit Component Layout MRF6S21060NR1 MRF6S21060NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 16 15.8 15.6 Gps, POWER GAIN (dB) 15.4 15.2 15 14.8 14.6 14.4 14.2 14 2060 2080 2100 IRL ACPR 2140 2160 2180 2200 VDD = 28 Vdc, Pout = 14 W (Avg.) IDQ = 610 mA, 2-Carrier W-CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3 D 28 27 26 Gps 25 24 -36 -38 -40 -42 -44 -46 2220 IM3 (dBc), ACPR (dBc) -5 -10 -15 -20 -25 D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%) -6 IM3 (dBc), ACPR (dBc) -9 -12 -15 -18 -21 -24 IDQ = 305 mA IRL, INPUT RETURN LOSS (dB) 610 mA 100 200 763 mA 10 Pout, OUTPUT POWER (WATTS) PEP IRL, INPUT RETURN LOSS (dB) 2120 f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 14 Watts Avg. 15.6 15.4 15.2 Gps, POWER GAIN (dB) 15 14.8 14.6 Gps D VDD = 28 Vdc, Pout = 28 W (Avg.) IDQ = 610 mA, 2-Carrier W-CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3 IRL ACPR 2080 2100 2120 2140 2160 2180 2200 39 38 37 36 -26 -28 -30 -32 -34 2220 14.4 14.2 14 2060 f, FREQUENCY (MHz) Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 28 Watts Avg. 17 16 Gps, POWER GAIN (dB) 15 458 mA 14 305 mA 13 12 11 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing 763 mA 610 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 915 mA -10 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing -20 -30 915 mA -40 -50 458 mA -60 1 Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) -10 VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 610 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz 57 55 Pout, OUTPUT POWER (dBm) 53 51 49 47 45 VDD = 28 Vdc, IDQ = 610 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 2140 MHz 30 32 34 36 38 40 P3dB = 49.986 dBm (99.68 W) P1dB = 49.252 dBm (84.18 W) Actual Ideal -20 -30 3rd Order -40 5th Order 7th Order -50 -60 0.1 1 TWO-TONE SPACING (MHz) 10 100 43 28 Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 60 50 40 30 20 10 0 1 10 Gps Figure 8. Pulse CW Output Power versus Input Power 0 TC = -30_C D IM3 25_C 85_C -10 IM3 (dBc), ACPR (dBc) VDD = 28 Vdc, IDQ = 610 mA f1 = 2135 MHz, f2 = 2145 MHz 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 25_C -20 -30_C ACPR -30_C 85_C -40 25_C -50 -60 100 200 -30 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 17 TC = -30_C 16 Gps, POWER GAIN (dB) 25_C 15 85_C 14 13 12 11 10 1 10 Pout, OUTPUT POWER (WATTS) CW 100 VDD = 28 Vdc IDQ = 610 mA f = 2140 MHz D Gps 70 -30_C 60 Gps, POWER GAIN (dB) 25_C 50 85_C 40 30 20 10 0 200 D, DRAIN EFFICIENCY (%) 16 15 14 13 12 16 V 11 10 0 20 40 60 80 100 120 Pout, OUTPUT POWER (WATTS) CW VDD = 12 V 20 V 24 V 32 V IDQ = 610 mA f = 2140 MHz 28 V Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S21060NR1 MRF6S21060NBR1 6 Figure 11. Power Gain versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 109 MTTF FACTOR (HOURS x AMPS2) 108 107 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature W - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF +20 +30 0 -10 -20 -30 -40 -50 -60 -70 -80 -25 3.84 MHz Channel BW -ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW -IM3 in 3.84 MHz BW -20 -15 -10 -5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal Figure 14. 2-Carrier W-CDMA Spectrum MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 7 Zo = 10 Zload f = 2110 MHz f = 2170 MHz f = 2110 MHz Zsource f = 2170 MHz VDD = 28 Vdc, IDQ = 610 mA, Pout = 14 W Avg. f MHz 2110 2140 2170 Zsource 7.59 - j8.39 6.71 - j8.83 5.84 - j8.62 Zload 3.31 - j5.35 3.17 - j5.16 3.06 - j4.92 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S21060NR1 MRF6S21060NBR1 8 RF Device Data Freescale Semiconductor NOTES MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 9 NOTES MRF6S21060NR1 MRF6S21060NBR1 10 RF Device Data Freescale Semiconductor NOTES MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS B E1 E3 2X A GATE LEAD DRAIN LEAD D1 4X D e 4X aaa M b1 CA D2 c1 H DATUM PLANE ZONE J 2X 2X E F A1 A2 E2 E5 E4 2X A NOTE 7 C SEATING PLANE PIN 5 NOTE 8 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -H-. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 --- .551 .559 .353 .357 .132 .140 .124 .132 .270 --- .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 --- 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 --- 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 4 D3 3 MRF6S21060NR1 MRF6S21060NBR1 12 RF Device Data Freescale Semiconductor CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC E5 BOTTOM VIEW 1 2 DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF6S21060NR1 STYLE 1: PIN 1. 2. 3. 4. 5. MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 13 MRF6S21060NR1 MRF6S21060NBR1 14 RF Device Data Freescale Semiconductor MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6S21060NR1 MRF6S21060NBR1 Rev. 16 3, 5/2006 Document Number: MRF6S21060N RF Device Data Freescale Semiconductor |
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